to ? 92l 1. emitter 2. collector 3. base to-92l plastic-encapsulate transistors KTC3228 transistor (npn) features z high voltage z large collector current capability z complementary to kta1275 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 1ma,i e =0 160 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 160 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 6 v collector cut-off current i cbo v cb =150v,i e =0 1 a emitter cut-off current i ebo v eb =6v,i c =0 1 a dc current gain h fe v ce =5v, i c =200ma 60 320 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =50ma 1.5 v base-emitter voltage v be v ce =5v, i c =5ma 0.45 0.75 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 20 pf transition frequency f t v ce =5v,i c =200ma 20 mhz classification of h fe rank r o y range 60-120 100-200 160-320 symbol parameter value unit v cbo collector-base voltage 160 v v ceo collector-emitter voltage 160 v v ebo emitter-base voltage 6 v i c collector current 1 a p c collector power dissipation 0.9 w r ja thermal resistance from junction to ambient 1 39 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|